Fqpf10n60ct mosfet nch 600v to220f fairchild semiconductor datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as. Fqpf12n60ct 600v nchannel mosfet package marking and ordering information electrical characteristics tc 25c unless otherwise noted notes. Its heterogeneous asymmetric architecture provides the ultimate flexibility for customers by enabling a singlechip solution that can run sophisticated operating systems and provide realtime responsiveness. Spa11n80c3 coolmostm power transistor features new revolutionary high voltage technology extreme dvdt rated high peak current capability qualified according to jedec 1 for target applications pbfree lead plating. May 09, 2016 g60n100 datasheet v, 60a, npt trench igbt fairchild, fgl60n100bntd datasheet, g60n100 pdf, g60n100 pinout, g60n100 circuit, g60n100 schematic. Fqp2n60c fqpf2n60c nchannel qfet mosfet 600 v, 2 a, 4. Fqp8n80cfqpf8n80c 800v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. Irfr1n60a, irfu1n60a, sihfr1n60a, sihfu1n60a vishay siliconix power mosfet features product summary halogenfree according to iec 61249221 vds v 600 definition rdson max. The utc 12n60c is a high voltage power mosfet designed to have better characteristics, such as fast switching time, low gate charge, low onstate. Elektrische eigenschaften electrical properties charakteristische werte characteristic values min. On semiconductor catalog first page, datasheet, datasheet search, data sheet, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, semiconductors. Failing to do so, nonpaying bidders will be reported to ebay. Obsolete product x24c44 characteristics subject to change without notice.
K absolute maximum ratings tc 25c, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 12 a drain current continuous id 12 a pulsed note 2 idm 48 a. Pulse width limited by maximum junction temperature. Toshiba field effect transistor silicon n channel mos type. Page 2 of 2 germanium glass diode 1n34a dimensions in how to contact us. Dyelec, alldatasheet, datasheet, datasheet search site for electronic. Ixfn60n80p mosfet nch 800v 53a sot227b ixys datasheet. Germanium glass diode 1n601n60p taitron components. G60n100 datasheet v, 60a, npt trench igbt fairchild, fgl60n100bntd datasheet, g60n100 pdf, g60n100 pinout, g60n100 circuit, g60n100 schematic. Symbol parameter fqp12n60 units vdss drainsource voltage 600 v id drain current continuous tc 25c 10. Aot12n60aotf12n60 600v,12a nchannel mosfet general description product summary vds id at vgs10v 12a rdson at vgs10v datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Mx 6solox applications processors nxp semiconductors. Goford 12n60 12n60f 600v nchannel mosfet general description vdss rdson id this power mosfet is produced using advanced planar stripe dmos 600v 0. All payments are due within 7 days of the close of auction. Aot12n60aotf12n60 symbol min typ max units 600 700 bvdss.
Pulse width limited by maximum junction temperature 2. Fairchild, alldatasheet, datasheet, datasheet search site for. The utc 12n60 are nchannel enhancement mode power field effect transistors mosfet which are produced using. Fqpf10n60ct mosfet nch 600v to220f fairchild semiconductor datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Pdf 18004linear lw100815ku 7803 3v 1a positive voltage regulator 20 qfn 3x3 ltc3524 ltc3452 qfn56 5x9 sw 2604 ic 50w led driver f qfn 3x3 datasheet for 4x4 keyboard lt3755. Utc 12 amps, 600650 volts nchannel mosfet,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
A, november 2001 ssp2n60bsss2n60b typical characteristics continued 105 104 103 102 101 100 101 102 101 100. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching. P11nm60fp pdf p11nm60fp pdf p11nm60fp pdf download. A mospec f12c05 thru f12c20 switchmode dual fast recovery power rectifiers designed for use in switching power supplies. Fqpfn60 datasheet, fqpfn60 pdf, fqpfn60 data sheet, fqpfn60 manual, fqpfn60 pdf, fqpfn60, datenblatt, electronics fqpfn60, alldatasheet, free, datasheet.
Fqp2n60c fqpf2n60c nchannel qfet mosfet this nchannel enhancement mode power mosfet is produced using fairchild semiconductors proprietary planar. Description 2003 fairchild semiconductor corporation fqp2n60c fqpf2n60c rev. This advanced technology has been especially tailored tominimize onstate resistance, provide superior switching performance, and. Aa absolute maximum ratings tc 25, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 4. Fqp3n80cfqpf3n80c 800v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. Pressing its leadership in 32bit processing into new territory.
Coldfire embedded controllers fact sheet mcf521x family. Aa absolute maximum ratings tc 25, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 2. High performance schottky rectifier, 2 x 6 a features low forward voltage drop guard ring for enhanced ruggedness and long term reliability popular dpak outline center tap configuration small foot print, surface mountable high frequency operation meets msl level 1, per jstd020, lf maximum peak of 260 c. Spa11n80c3 coolmostm power transistor features new revolutionary high voltage technology extreme dvdt rated high peak current capability qualified according to jedec 1 for target applications. Packages are available 1 qfn16 mn suffix case 485g cc cc 16 sg11 alywg g a l y w g, q0 figure 1. G60n100 datasheet v, 60a, npt trench igbt fairchild. Ixfn60n80p mosfet nch 800v 53a sot227b ixys datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. K absolute maximum ratings tc 25c, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 12 a drain current.
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